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UTC BT150
SCRs
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
SYMBOL
1
A
K
G
1: CATHODE 2: ANODE
TO-220
3: GATE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Repetitive peak off-state voltages BT150-500 BT150-650 BT150-800 Average on-state current (half sine wave; Tmb 113 C)
SYMBOL
VDRM , VRRM
RATING
500* 650* 800 2.5
UNIT
V A
IT(AV)
4 A RMS on-state current IT(RMS) (all conduction angles) Non-repetitive peak on-state current (half sine wave; Tj = 25 C prior to surge) A ITSM 35 t = 10 ms 38 t = 8.3 ms I2t for fusing (t = 10 ms) I2t 6.1 A2s Repetitive rate of rise of on-state current after triggering A/s dIT /dt 50 (ITM = 10 A; IG = 50 mA; dIG /dt = 50 mA/ms) Peak gate current IGM 2 A Peak gate voltage VGM 5 V Peak reverse gate voltage VRGM 5 V Peak gate power (over any 20 ms period) PGM 5 W Average gate power PG(AV) 0.5 W Storage temperature Tstg -40~150 Operating junction temperature Tj 125** *Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/s. ** Note: operation above 110 may require the use of a gate to cathode resistor of 1k or less.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-008,B
UTC BT150
THERMAL RESISTANCES
PARAMETER
Thermal resistance Junction to mounting base Thermal resistance Junction to ambient In free air
SYMBOL
Rth j-mb Rth j-a
MIN
TYP
60
MAX
2.5
UNIT
K/W K/W
STATIC CHARACTERISTICS(Tj=25C,unless otherwise stated)
PARAMETER
Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current
SYMBOL
IGT IL IH VT VGT ID , IR
CONDITIONS
VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = VDRM(max) ; IT = 0.1 A; Tj = 110 C VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 C
MIN
TYP
15 0.17 0.10 1.23 0.4 0.2 0.1
MAX
200 10 6 1.8 1.5 0.5
UNIT
mA mA MA V V mA
0.1
DYNAMIC CHARACTERISTICS(Tj=25C,unless otherwise stated)
PARAMETER
Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated Turn-off time
SYMBOL
dVD /dt tgt tq
CONDITIONS
VDM = 67% VDRM(max) ; Tj = 125 C; exponential waveform; RGK = 100 ITM = 10 A; VD = VDRM(max) ; IG = 5mA; dIG /dt = 0.2A/s VD = 67% VDRM(max) ; Tj = 125 C; ITM = 8A; VR = 10V; dITM /dt = 10 A/s; dVD /dt = 2V/s; RGK = 1k
MIN
TYP
50 2 100
MAX UNIT
V/s s s
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-008,B
UTC BT150
ITSM/A IT 112.5 2.2 2.8 4 117.5 120 0.5 1 1.5 2 2.5 3 122.5 125 0 1 10 100 1000 1.9 a=1.57 115 30 20 TT ITSM time
6 5 4 3 2 1
Ptot/W
conduction form angle factor degrees a 4 30 2.8 60 2.2 90 1.9 120 1.57 180
Tmb(max)/C
110
40
Tj initial=25max
10
0 0
IF(AV)/A Fig.1. Maximum on-state dissipation,Ptot,versus average on-state current,IT(AV),where a=form factor=IT(RMS)/IT(AV). 1000 ITSM/A 12 10 8 100 IT T 10 10us dIT/dt limit 6 ITSM time 100us 4 2
Number of half cycles at 50Hz Fig4.Maximum Permissible non-repetitive peak on-state current ITSM,versus number of cycles,for sinusoidal currents,f=50Hz. IT(RMS)/A
Tj initial=25max
10ms 1ms T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp, for sinusoidal currents,tp10ms
0 0.01
10 0.1 1 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50Hz;Tmb 113 VGT(Tj) VGT(25)
5 4 3 2 1
IT(RMS)/A 113
1.6 1.4 1.2 1 0.8 0.6 0 50 Tmb/C 100 150
0 -50
0 0
0.4 -50
50 50 Tj/
100 100
150 150
Fig.3. Maximum permissible rms current lT(RMS), versus mounting base temperature Tmb
Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25,versus junction temperature Tj.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-008,B
UTC BT150
IGT(Tj) IGT(25) IT/A
Tj=125 Tj=25 Vo=1.26V Rs=0.099
3 2.5 2 1.5 1 0.5 0 -50
2 10 8 6 4 2
typ
max
50 100 150 Tj/C Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25),versus junction temperature Tj.
0
0 0
0.5
1
1.5 VT/V
2
2.5
3
Fig.10.Typical and maximum on-state characteristic.
3 2.5 2 1.5 1 0.5
IL(Tj) IL(25)
10
Zth j-mb(K/W)
1
0.1
P
D
tp t
0 -50
0
50 Tj/C
100
150
0.01 10us
0.1ms
1ms
10ms 0.1s tp/s
1s
10s
Fig.8.Normalised latching Current IL(Tj)/IL(25), versus junction temperature Tj IH(Tj) IH(25)
Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp.
3 2.5 2 1.5 1 0.5
1000
dVD/dt(V/us)
100
RGK=100
10
0 -50
50 100 150 Tj/C Fig. 9.Normalised holding current IH(Tj)/IH(25), versus junction temperature Tj.
0
1 0
100 150 Tj/C Fig.12.Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.
50
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-008,B
UTC BT150
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R301-008,B

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